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Originally Posted by Colm 
Problem is if the down stream device clamping voltage is sufficiently lower than the service entrance device, it functions before the service entrance device and does much or all of the work. Martzloff wrote of the problem of coordination. You can find his papers on the NIST site.

Problem is if the down stream device clamping voltage is sufficiently lower than the service entrance device, it functions before the service entrance device and does much or all of the work. Martzloff wrote of the problem of coordination. You can find his papers on the NIST site.
Over the years, Martzloff has changed his opinion from cascading good to cascading bad, I believe he now thinks good..
His primary "bad" thinking was because of the possibility of having a gas discharge tube at the service entrance cascaded with an MOV... Under these conditions, the MOV would prevent the tube from ionizing ever..until the MOV fails short and it's breaker clears the line. Unfortunately, breakers do still take some time to clear magnetically, the MOV must not lose containment before the clearing.
Running the end of branch (EOB) 30 feet or so from the panel spd guarantees the EOB does most of the work, but when the line current IR drop exceeds 100 volts or so, the main panel clamps that current. Essentially, the cascade guarantees an exceptionally low current peak at the EOB. So, the EOB is seeing peaks of 100's of amps levels, which is trivial, and the service panel unit rarely clamps. Best of both worlds.
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It gives a higher MTBF to the overall system, but requires more robust EOB equipment. It also gives one point of failure for excessive conditions.
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Back in '81, the semi manufacturers (myself in that bunch) were using 800 volts as a target for line operation silicon. Since then, it may have gone up.
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Typical SMPS units have a diode or bridge directly connected to the line. If that silicon's BVR is exceeded, it is toast. The robustness of a 90 mil diameter silicon chip to avalanch reverse breakdown current is not high at all. For example, a kilojoule BVR dissipation at 1000 volts will destroy most 3 ampere diodes. 1000 volt diodes are not that expensive anymore.
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Originally Posted by Colm 
Before I installed a whole-house device, the only problem I had was that dimmers and incandescent lamps did not last as long as they should have. Both the triacs in the dimmers and incandescent lamps fail around 1500V according to Martzloff's research. So, one could say that I was getting surges of at least 1500V. Nothing else was failing. Only very basic devices with little or no inherent protection. Now that I have a whole-house device even those don't fail prematurely.

Before I installed a whole-house device, the only problem I had was that dimmers and incandescent lamps did not last as long as they should have. Both the triacs in the dimmers and incandescent lamps fail around 1500V according to Martzloff's research. So, one could say that I was getting surges of at least 1500V. Nothing else was failing. Only very basic devices with little or no inherent protection. Now that I have a whole-house device even those don't fail prematurely.
Earlier triacs were certainly less robust, but yes, they do not like fast transients at all. In general, a silicon device will not avalanche across it's bulk where it would absorb lots of energy, but in a very small localized area at the edge of the device where the energy is concentrated. Even if it doesn't avalanche, the dv/dt is capable of turning on a small part of the triac, which can also destroy the device..
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Agreed. But also make sure that the EOB device is multiport.
Cheers, John

















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